The team of Professor Zhang Weili from Tianjin Institute of Precision Instrument and Optoelectronics Engineering and Terahertz Research Institute made a breakthrough in the research of graphene THz modulation. The research was published in the paper published by Nature Communications [6, 7082 ( 2015)]. The paper, entitled "Active graphene-silicon hybrid diode for terahertz waves", reports on the original work of using opto-electronic parallelism to actively modulate a graphene-silicon composite structure.
As a typical two-dimensional material, graphene has a single-layer atomic structure, excellent optical, electrical and mechanical properties, showing many attractive and novel physical properties. Graphene has many potential applications in the terahertz field due to its externally tunable conductivity and tunable band gap. Among them, the use of graphene for terahertz wave active regulation is one of the current research hot spots. However, at present, the terahertz wave is usually controlled by a single type of optical excitation or electrical modulation, and the modulation depth is obviously limited.
Based on the previous research, Zhang Weili team proposed a new method based on graphene and semiconductor terahertz modulation, using graphene-silicon composite structure, under the excitation of low power continuous laser, using very low voltage ( 0.1-4 volts) to achieve tremendous modulation of terahertz signals with modulation depths as high as 83% and bandwidths covering the 0.4-2 THz range. The terahertz integrated device developed on this basis realizes the optical "diode" effect of the forward bias and the negative bias of the terahertz wave. The research results have laid an important foundation for the development of terahertz two-dimensional materials and devices and have very important application prospects in the fields of broadband terahertz-wave modulators, terahertz-wave rectification and terahertz-wave communications.
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